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Disco duro SSD 2TB M.2 2280 NVMe PCI-e Gen4 x4 Samsung 990 Pro MZ-V9P2T0BW
Precio habitual
344,05 €
Precio especial
270,49 €
Entrega 1-2 días hábiles
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Disco duro SSD 2TB M.2 2280 NVMe PCI-e Gen4 x4 Samsung 990 Pro MZ-V9P2T0BW
Disco duro SSD 2TB M.2 2280 NVMe PCI-e Gen4 x4 Samsung 990 Pro MZ-V9P2T0BW
Especificaciones
Ficha Técnica
Disco duro SSD 2TB M.2 2280 NVMe PCI-e Gen4 x4 Samsung 990 Pro MZ-V9P2T0BW
Características generales
Uso Client PCs, Game Consoles Capacidad 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise) Formato M.2 (2280) Interfaz PCIe Gen 4.0 x4, NVMe 2.0 Dimensiones 80 x 22 x 2.3 mm Peso Max 9.0g Weight Memoria de almacenamiento Samsung V-NAND 3-bit MLC Controller Samsung in-house Controller Memoria caché Samsung 2GB Low Power DDR4 SDRAM
Características especiales
Soporte TRIM Supported Soporte S.M.A.R.T Supported GC (Garbage Collection) Auto Garbage Collection Algorithm Encriptación AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive) WWN Not supported Soporte Modo Suspensión en dispositivo Sí
Rendimiento
Lectura secuencial Up to 7,450 MB/s * Performance may vary based on system hardware & configuration Escritura secuencial Up to 6,900 MB/s * Performance may vary based on system hardware & configuration Lectura aleatoria (4KB, QD32) Up to 1,400,000 IOPS * Performance may vary based on system hardware & configuration Escritura aleatoria (4KB, QD32) Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration Lectura aleatoria (4KB, QD1) Up to 22,000 IOPS * Performance may vary based on system hardware & configuration Escritura aleatoria (4KB, QD1) Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Entorno
Consumo energético medio *Average: 5.5 W*Maximum: 8.5 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration Consumo energético (Idle) Max. 55 mW * Actual power consumption may vary depending on system hardware & configuration Voltaje soportado 3.3 V ± 5 % Allowable voltage Durabilidad (MTBF) 1.5 Million Hours Reliability (MTBF) Temperatura de funcionamiento 0 - 70 ℃ Operating Temperature Golpes 1,500 G & 0.5 ms (Half sine)
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